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| DT451N N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 Dim A B Min 6.30 2.90 6.71 3.30 2.22 0.92 1.10 1.55 0.025 0.66 4.55 -- 10 0.254 10 Max 6.71 3.10 7.29 3.71 2.35 1.00 1.30 1.80 0.102 0.79 4.70 10 16 0.356 16 A B C D E D CD G E J K D S G H G P R S H J K L M N P R S L M N Mechanical Data * * SOT-223 Plastic Case Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above All Dimensions in mm Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current Maximum Power Dissipation 25C unless otherwise specified Symbol VDSS VGSS Note 1a Continuous Pulsed Note 1a Note 1b Note 1c ID Pd Tj, TSTG Value 30 20 5.5 25 3.0 1.3 1.1 -65 to +150 Unit V V A W C Characteristic Operating and Storage Temperature Range Thermal Characteristics Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1 Symbol RQJA RQJC Value 42 12 Unit C/W C/W Notes: 1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the user's board design. 1a. With 1 in2 oz 2 oz. copper mounting pad RQJA = 42C/W. 1b. With 0.0066 in2 oz 2 oz. copper mounting pad RQJA = 95C/W. 1c. With 0.0123 in2 oz 2 oz. copper mounting pad RQJA = 110C/W. DS11607 Rev. C-4 1 of 4 DT451N Electrical Characteristics 25C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Tj =55C Gate-Body Leakage, Forward Gate-Body Leakage, Reverse ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Tj = 125C Static Drain-Source On-Resistance RDS (ON) Tj = 125C On-State Drain Current Forward Transconductance DYNAMIC CHACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge CISS COSS CRSS tD(ON) tr tD(OFF) tf Qg Qgs Qgd -- -- -- -- -- -- -- -- -- -- 730 370 140 20 15 19 10 16 1.8 4.5 -- -- -- 30 25 40 30 25 3 7.0 pF pF pF ns ns ns ns nC nC nC VDS = 10V. ID = 5.5A. VGS = 10V VDD = 15V, ID = 1.0A VGEN = 10V, RGEN = 6.0W VDS = 10V, VGS = 0V f = 1.0MHz ID(ON) gFS 18 15 -- VGS(th) 1.0 0.7 -- 1.6 1.2 0.042 0.065 0.064 -- 6.0 3.0 2.2 0.05 0.10 0.08 -- -- V W A m VDS = VGS, ID = 250A VGS = 10V, ID = 5.5A VGS = 4.5V, ID = 4.3A VGS = 10V, VDS = 5.0V VGS = 4.5V, VDS = 5.0V VDS = 10V, ID = 5.5A BVDSS IDSS IGSSF IGSSR 30 -- -- -- -- -- -- -- -- 2.0 20 100 -100 V A nA nA VGS = 0V, ID = 250A VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V Symbol Min Typ Max Unit Test Condition SWITCHING CHARACTERISTICS (Note 2) DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Max Continuous Drain-Source Diode IS -- -- Forward Current Drain-Source Diode Forward Voltage VSD -- 0.8 2.5 1.2 A V VGS = 0V, IS = 5.5A (Note 2) Notes: 2. Pulse Test: Pulse width l 300s, duty cycle l 2.0%. DS11607 Rev. C-4 2 of 4 DT451N RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 18 VGS = 10V 6.0 5.0 4.5 4.0 3.0 VGS = 3.5V 4.0V ID, DRAIN-SOURCE CURRENT (A) 2.5 12 3.5 2.0 4.5V 5.0V 6.0V 1.5 6 3.0 1.0 10V 0 0 1 2 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1, On-Region Characteristics 0.5 3 0 3 6 9 12 15 18 ID, DRAIN CURRENT (A) Fig. 2, On-Resistance vs Gate Voltage and Drain Current RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 ID = 5.5A VGS = 10V 10 VDS = 10V TJ = -55 C 125 ID, DRAIN CURRENT (A) 1.4 8 25 1.2 6 1.0 4 0.8 2 0.6 -50 -25 0 25 50 75 100 125 150 0 1 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4, Transfer Characteristics Tj, JUNCTION TEMPERATURE ( C) Fig. 3, On-Resistance vs Temperature DS11607 Rev. C-4 3 of 4 DT451N 30 10 R DS 10 LI M IT 0 1m 10 10 10 dc 1s s 0m ms s s N (O ) ID, DRAIN CURRENT (A) s 1 0.1 VGS = 10V SINGLE PULSE RQJA = 42 C TA = 25 C 0.01 0.1 1 10 50 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5, Maximum Safe Operating Area 1.0 D = 0.5 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.2 0.1 0.1 0.05 0.02 0.01 P(pk) RQJA (t) = r(t) b RQJA RQJA = See Note 1c 0.01 Single Pulse t1 t2 TJ - TA = PPK b RQJA(t) Duty Cycle, D = t1/t2 0.001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 3000 t1, SQUARE WAVE PULSE DURATION (seconds) Fig. 6, Typical Normalized Transient Thermal Impedance Curves Remark: Thermal characterization performed under conditions described in note 1c. Transient thermal response will change depending on the circuit board design. DS11607 Rev. C-4 4 of 4 DT451N |
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